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University of Southern California Dissertations and Theses
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Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration
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Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration

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Asset Metadata
Creator Chen, Feng (author) 
Core Title Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration 
School Andrew and Erna Viterbi School of Engineering 
Degree Doctor of Philosophy 
Degree Program Chemical Engineering 
Degree Conferral Date 2007-12 
Publication Date 08/29/2007 
Defense Date 07/06/2007 
Publisher University of Southern California (original), University of Southern California. Libraries (digital) 
Tag CVD/CVI,OAI-PMH Harvest,silicon carbide,simulation 
Language English
Advisor Sahimi, Muhammad (committee chair), Robert, Bau (committee member), Tsotsis, Theodore T. (committee member) 
Creator Email fengc@usc.edu 
Permanent Link (DOI) https://doi.org/10.25549/usctheses-m799 
Unique identifier UC1165346 
Identifier etd-Chen-20070829 (filename),usctheses-m40 (legacy collection record id),usctheses-c127-537931 (legacy record id),usctheses-m799 (legacy record id) 
Legacy Identifier etd-Chen-20070829.pdf 
Dmrecord 537931 
Document Type Thesis 
Rights Chen, Feng 
Type texts
Source University of Southern California (contributing entity), University of Southern California Dissertations and Theses (collection) 
Repository Name Libraries, University of Southern California
Repository Location Los Angeles, California
Repository Email uscdl@usc.edu
Abstract (if available)
Abstract Inorganic membranes are of much interest these days for their potential use in high temperature applications. SiC nanoporous membranes, in particular, have important good characteristics which make them appropriate for use in high temperature, steam, acid environments. In this Thesis, we used a CVD/CVI process to prepare flat disk and tubular membranes. We use a time-dependant model to describe the process during membrane preparation and to predict the transport properties of the resulting membranes. We also develop a pore network model of the same membranes to describe the transport of a binary gas mixture through these membranes. Both these models provide a good agreement with the experimental data. 
Tags
CVD/CVI
silicon carbide
simulation
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University of Southern California Dissertations and Theses
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University of Southern California Dissertations and Theses 
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