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Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration
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Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration
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Abstract (if available)
Abstract
Inorganic membranes are of much interest these days for their potential use in high temperature applications. SiC nanoporous membranes, in particular, have important good characteristics which make them appropriate for use in high temperature, steam, acid environments. In this Thesis, we used a CVD/CVI process to prepare flat disk and tubular membranes. We use a time-dependant model to describe the process during membrane preparation and to predict the transport properties of the resulting membranes. We also develop a pore network model of the same membranes to describe the transport of a binary gas mixture through these membranes. Both these models provide a good agreement with the experimental data.
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University of Southern California Dissertations and Theses
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Asset Metadata
Creator
Chen, Feng
(author)
Core Title
Continuum and pore netwok modeling of preparation of silicon-carbide membranes by chemical-vapor deposition and chemical-vapor infiltration
School
Viterbi School of Engineering
Degree
Doctor of Philosophy
Degree Program
Chemical Engineering
Degree Conferral Date
2007-12
Publication Date
08/29/2007
Defense Date
07/06/2007
Publisher
University of Southern California
(original),
University of Southern California. Libraries
(digital)
Tag
CVD/CVI,OAI-PMH Harvest,silicon carbide,simulation
Language
English
Advisor
Sahimi, Muhammad (
committee chair
), Robert, Bau (
committee member
), Tsotsis, Theodore T. (
committee member
)
Creator Email
fengc@usc.edu
Permanent Link (DOI)
https://doi.org/10.25549/usctheses-m799
Unique identifier
UC1165346
Identifier
etd-Chen-20070829 (filename),usctheses-m40 (legacy collection record id),usctheses-c127-537931 (legacy record id),usctheses-m799 (legacy record id)
Legacy Identifier
etd-Chen-20070829.pdf
Dmrecord
537931
Document Type
Thesis
Rights
Chen, Feng
Type
texts
Source
University of Southern California
(contributing entity),
University of Southern California Dissertations and Theses
(collection)
Repository Name
Libraries, University of Southern California
Repository Location
Los Angeles, California
Repository Email
cisadmin@lib.usc.edu
Tags
CVD/CVI
silicon carbide
simulation