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A 1.2 V micropower CMOS active pixel sensor
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Lithium niobate microphotonic modulators
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Visible CMOS APS imager with ultra high dynamic range
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Active microdisk resonant devices and semiconductor optical equalizers as building blocks for future photonic circuitry
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A state to state vibrational energy transfer study of the HF-HCN system
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Photoinjection and current multiplication at metal-semiconductor interfaces
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Time-resolved holographic measurements of bulk space-charge gratings in photorefractive Bi<sub>12</sub>SiO<sub>20</sub>
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Charge/discharge mechanism in MNOS devices
Optical and opto-electronic properties of GaAs doping superlattices grown by metalorganic chemical vapor deposition
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The Czochralski growth and characterization of nonstoichiometric bismuth silicon oxide, Bi[x]SiO[1.5x+2'] for photorefractive devices
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Recombination dynamics and optical characterization of excess carriers in GaAs/AlGaAs structures grown by metalorganic chemical vapor deposition
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A theory for the measurement of heterojunction band discontinuity energies in the presence of interface states and its application to high sensitivity heterojunction phototransistors
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Resonant tunneling in III-V semiconductor heterostructures
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Study of defects of In[x]Ga[1-x]As/InP heterojunctions
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As optical receiver for application to long wavelength (1.3-1.55 mum) fiber optical communications
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Growth and characterization of heterojuncions and multiple quantum well structures based on crystalline organic semiconductors
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BSIM_plus: An advanced MOS transistor model for VLSI circuits
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A novel electron beam source based on the back-lighted thyratron
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GaAs and A1GaAs based opto-thyristors for pulsed power applications
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Optically controlled electrooptic aluminum gallium arsenide waveguide switches
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As photoreceiver for 1.3 to 1.55 mum fiber optical communication
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Growth and processing of highly strained AlGaAs/InGaAs/AlGaAs quantum wells and their application in doped channel metal-insulator-semiconductor field effect transistors (DC-MISFETs)
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