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Growth control, structural characterization, and electronic structure of Stranski-Krastanow indium arsenide/gallium arsenide(001) quantum dots
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Bimetallic Surface Structures Of Tin On Late-Transition Metals
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Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy
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Quasiepitaxial Growth Of Archetype Organic Molecules: Modeling And Observation
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A study of near band gap photoluminescence in [chemical equation] for x<0.15
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Growth and evaluation of aluminum nitride epitaxial films on sapphire for surface acoustic wave device applications
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Liquid phase epitaxial growth and characterization of InAs x Sb 1-x  and In 1-x Ga x Sb on 111B InSb  substrates for infra-red detectors and heterojunction lasers
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The characterization of GaP/Si heterostructures grown by organometallic vapor-phase epitaxy
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Organometallic chemical vapor deposition of epitaxial zinc oxide on sapphire for surface acoustic wave device applications
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Metalorganic chemical vapor deposition of single crystal GaN, A1N and A1[x]Ga[1-x]N layers on sapphire
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A study of growth mechanisms and electrical and optical properties of epitaxial AlₓGa₁₋ₓN layers grown by atmospheric pressure metalorganic chemical vapor deposition
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Nonlinear optical absorption in single heterostructure Schottky barrier epitaxial structures
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Effects of host material and dopant concentration on the energy transfer processes in Nd(3+) and Er(3+) doubly doped crystals designed for efficient 3[micro]m lasing
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Resonant tunneling in III-V semiconductor heterostructures
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Study of defects of In[x]Ga[1-x]As/InP heterojunctions
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Growth and characterization of heterojuncions and multiple quantum well structures based on crystalline organic semiconductors
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Optically controlled electrooptic aluminum gallium arsenide waveguide switches
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As photoreceiver for 1.3 to 1.55 mum fiber optical communication
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Nonlinear absorption in (Cd,Zn)Se/ZnSe single quantum wells
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Growth and processing of highly strained AlGaAs/InGaAs/AlGaAs quantum wells and their application in doped channel metal-insulator-semiconductor field effect transistors (DC-MISFETs)
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Growth and characterization of thick GaN epilayers
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Low threshold, high temperature InGaAsP/InP 1.3 micron lasers grown on p-type InP substrates with a three-melt technique
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