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A physically-based device model of depletion MOSFETS
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Modeling, fabrication and characterization of Pnp heterojunction bipolar transistors
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As optical receiver for application to long wavelength (1.3-1.55 mum) fiber optical communications
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A high voltage GaAs field-effect transistor for pulsed switching applications: The GaAs static induction transistor
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As photoreceiver for 1.3 to 1.55 mum fiber optical communication
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A multichannel optical receiver array for gigabit/s parallel digital data links
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Growth and field emission of multi-walled carbon nanotubes
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Microsoft Word - 20110714_JMSanders Dissertation_Second Submit.docx
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A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications
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