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Optimum complementary bipolar process for silicon-germanium HBTs
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Molecular hole transporting materials for organic light -emitting diodes (OLEDs)
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Vacuum Atomic Layer Epitaxy Of Gallium Arsenide Using Various Metalorganic Precursors
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Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy
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Quasiepitaxial Growth Of Archetype Organic Molecules: Modeling And Observation
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Cathodoluminescence studies of the influence of strain relaxation on the optical properties of InGaAs/GaAs quantum heterostructures
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A study of near band gap photoluminescence in [chemical equation] for x<0.15
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Liquid phase epitaxial growth and characterization of InAs x Sb 1-x  and In 1-x Ga x Sb on 111B InSb  substrates for infra-red detectors and heterojunction lasers
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The characterization of GaP/Si heterostructures grown by organometallic vapor-phase epitaxy
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Maximized data rate capability for optical communication using semiconductor devices with pulse position modulation
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Modeling, fabrication and characterization of Pnp heterojunction bipolar transistors
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Atomic Layer Epitaxy of III-V compound semiconductors by thermal and laser-assisted metalorganic chemical vapor deposition
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Optical studies of unconfined energy states and characterizations of GaAs/Al[x]Ga[1-x]As superlattices
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Quantum well semiconductor lasers for optoelectronic integration grown by metalorganic chemical vapor deposition on nonplanar substrates
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Recombination dynamics and optical characterization of excess carriers in GaAs/AlGaAs structures grown by metalorganic chemical vapor deposition
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Nonlinear optical absorption in single heterostructure Schottky barrier epitaxial structures
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Molecular excitation and fragmentation induced by beam/surface collisions, photon absorption, and chemical activation
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A study of optical devices based in gallium phosphide
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Characterization, modeling and optimization of AlGaAs/GaAs heterojunction bipolar transistors
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A theory for the measurement of heterojunction band discontinuity energies in the presence of interface states and its application to high sensitivity heterojunction phototransistors
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Resonant tunneling in III-V semiconductor heterostructures
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In 0.53 Ga 0.47 As/InP Photodetectors for Optical Communications
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As optical receiver for application to long wavelength (1.3-1.55 mum) fiber optical communications
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