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High temperature defect structure of Al, As and Ga doped ZnSe
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Growth of thin epitaxial GaAs films from Ga solutions
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Studies of carrier relaxation, recombination, and transport in InGaAs/GaAs quantum wells and GaAs/AlGaAs nanostructures using spatially, spectrally and temporally resolved electron beam probes
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Growth, characterization of gallium arsenide based nanowires and application in photovoltaic cells
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Infrared active localized vibrational modes of impurities in GaAs
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Studies of lattice vibrations and plasmon-LO phonon coupling in Ga<sub>1-x</sub>Al<sub>x</sub>As
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As photoreceiver for 1.3 to 1.55 mum fiber optical communication
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Cathodoluminescence studies of the influence of strain relaxation on the optical properties of InGaAs/GaAs quantum heterostructures
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Design, fabrication and characterization of high-performance native-oxide confined InGaAs/GaAs quantum-well edge-emitting and surface-emitting lasers
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Design and construction of a superconducting magnet and its use in low temperature electron transport measurements with GaAs/AlGaAs heterostructures
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Liquid phase epitaxial growth and characterization of InAs x Sb 1-x  and In 1-x Ga x Sb on 111B InSb  substrates for infra-red detectors and heterojunction lasers
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The cost of common stock equity as measured by earnings-price ratios for distribution gas utilities in original cost and fair value jurisdictions
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A monolithically integrated In<sub>0.53</sub>Ga<sub>0.47</sub>As optical receiver for application to long wavelength (1.3-1.55 mum) fiber optical communications
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Low threshold, high temperature InGaAsP/InP 1.3 micron lasers grown on p-type InP substrates with a three-melt technique
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Molecular beam epitaxical growth of strained InAs island quantum boxes on GaAs (100): Growth kinetics, vertical self-organization, and lasing characteristics
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The selective area growth and coalescence of indium phosphide nanostripe arrays on silicon through MOCVD for NIR monolithic integration
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CI approach to spectra of quantum dots
GaN nanostructures grown by selective area growth for solid-state lighting
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Barney Oldfield, etc. at Wilshire Refinery, Norwalk, Calif., 1941 [image 6]
A gas discharge used as a variable capacitor
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Vacuum ultraviolet radiation as a probe of rare gas plasmas
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A study of growth mechanisms and electrical and optical properties of epitaxial AlₓGa₁₋ₓN layers grown by atmospheric pressure metalorganic chemical vapor deposition
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Pipes for the Southern California Gas Company, ca.1955
New station, South La Cienega and West Olympic Boulevard, Los Angeles, CA, 1934 [image 3]
107. Lipton lecture, Valley State College, 1959-11-12
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