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84
1540 1560 1580 1600
0.000
0.001
0.002
0.003
0.004
Measured Transmission and Loss for W1, Type-A PCWG on SiO2
Wavelength, nm
Collected Power, mW
0
50
100
150
200
250
300
350
Propagation Loss, cm-1
Figure 4.6: Measured transmission and loss for W1, Type-A PCWG
with SiO2 bottom cladding. Facets were assumed to have R=0.3.
In Figure 4.7, we compare measured and calculated propagation loss. Since the r/a for
this device was 0.309, which was larger than the r/a of 0.3 used when calculating the
dispersion diagram, propagation loss, and group index, it was necessary to shift the
measured data along the wavelength axis in order to compare experimental results with
numerical data. We expect a device with r/a=0.309 to have a spectral response that is
proportionately blue-shifted compared to a device with r/a=0.3. Therefore, in this case,
we have red-shifted the loss data shown in Figure 4.7 by 3% when comparing them to
calculated values in Figure 4.7. All of the measured values are much lower than the
numerical predictions. This indicates that the assumed reflectivity of 0.3 is too low.
However, the loss trend is clearly consistent with the theoretical data, as there is a
Object Description
| Title | Silicon-based photonic crystal waveguides and couplers |
| Author | Farrell, Stephen G. |
| Author email | stephenf@usc.edu; sgfarrell@yahoo.com |
| Degree | Doctor of Philosophy |
| Document type | Dissertation |
| Degree program | Electrical Engineering |
| School | Viterbi School of Engineering |
| Date defended/completed | 2008-09-05 |
| Date submitted | 2008 |
| Restricted until | Unrestricted |
| Date published | 2008-10-20 |
| Advisor (committee chair) | O'Brien, John D. |
| Advisor (committee member) |
Dapkus, P. Daniel Steier, William Haas H., Stephan |
| Abstract | Most commercial photonics-related research and development efforts currently fall into one or both of the following technological sectors: silicon photonics and photonic integrated circuits. Silicon photonics [18] is the field concerned with assimilating photonic elements into the well-established CMOS VLSI architecture and IC manufacturing. The convergence of these technologies would be mutually advantageous: photonic devices could increase bus speeds and greatly improve chip-to-chip and board-to-board data rates, whereas photonics, as a field, would benefit from mature silicon manufacturing and economies of scale. On the other hand, those in the photonic integrated circuit sector seek to continue the miniaturization of photonic devices in an effort to obtain an appreciable share of the great windfall of profits that occur when manufacturing, packaging, and testing costs are substantially reduced by shrinking photonic elements to chip-scale dimensions. Integrated photonics companies may [12] or may not [34] incorporate silicon as the platform.; In this thesis, we seek to further develop a technology that has the potential to facilitate the forging of silicon photonics and photonic integrated circuits: photonic crystals on silicon-on-insulator substrates. We will first present a brief overview of photonic crystals and their physical properties. We will then detail a finely-tuned procedure for fabricating two-dimensional photonic crystal in the silicon-on-insulator material system. We will then examine transmission properties of our fabricated devices including propagation loss, group index dispersion, and coupling efficiency of directional couplers. Finally, we will present a description of a system for adiabatically tapering optical fibers and the results of using tapered fibers for efficiently coupling light into photonic crystal devices. |
| Keyword | photonics; photonic crystal; silicon; integrated photonics; SOI; optoelectronics; waveguides; couplers; optical fiber; tapered fiber; evanescent coupling; adiabaticity; silicon photonics |
| Language | English |
| Part of collection | University of Southern California dissertations and theses |
| Publisher (of the original version) | University of Southern California |
| Place of publication (of the original version) | Los Angeles, California |
| Publisher (of the digital version) | University of Southern California. Libraries |
| Provenance | Electronically uploaded by the author |
| Type | texts |
| Legacy record ID | usctheses-m1681 |
| Contributing entity | University of Southern California |
| Rights | Farrell, Stephen G. |
| Repository name | Libraries, University of Southern California |
| Repository address | Los Angeles, California |
| Repository email | cisadmin@lib.usc.edu |
| Filename | etd-Farrell-2433 |
| Archival file | uscthesesreloadpub_Volume32/etd-Farrell-2433.pdf |
Description
| Title | Page 95 |
| Contributing entity | University of Southern California |
| Repository email | cisadmin@lib.usc.edu |
| Full text | 84 1540 1560 1580 1600 0.000 0.001 0.002 0.003 0.004 Measured Transmission and Loss for W1, Type-A PCWG on SiO2 Wavelength, nm Collected Power, mW 0 50 100 150 200 250 300 350 Propagation Loss, cm-1 Figure 4.6: Measured transmission and loss for W1, Type-A PCWG with SiO2 bottom cladding. Facets were assumed to have R=0.3. In Figure 4.7, we compare measured and calculated propagation loss. Since the r/a for this device was 0.309, which was larger than the r/a of 0.3 used when calculating the dispersion diagram, propagation loss, and group index, it was necessary to shift the measured data along the wavelength axis in order to compare experimental results with numerical data. We expect a device with r/a=0.309 to have a spectral response that is proportionately blue-shifted compared to a device with r/a=0.3. Therefore, in this case, we have red-shifted the loss data shown in Figure 4.7 by 3% when comparing them to calculated values in Figure 4.7. All of the measured values are much lower than the numerical predictions. This indicates that the assumed reflectivity of 0.3 is too low. However, the loss trend is clearly consistent with the theoretical data, as there is a |
