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GALLIUM ARSENIDE BASED SEMICONDUCTOR LASER DESIGN AND
GROWTH BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
by
Yuanming Deng
A Dissertation Presented to the
FACULTY OF THE GRADUATE SCHOOL
UNIVERSITY OF SOUTHERN CALIFORNIA
In Partial Fulfillment of the
Requirements for the Degree
DOCTOR OF PHILOSOPHY
(ELECTRICAL ENGINEERING)
December 2006
Copyright 2006 Yuanming Deng
Object Description
| Title | Gallium arsenide based semiconductor laser design and growth by metal-organic chemical vapor deposition |
| Author | Deng, Yuanming |
| Author email | yuanmind@usc.edu |
| Degree | Doctor of Philosophy |
| Document type | Dissertation |
| Degree program | Electrical Engineering |
| School | Viterbi School of Engineering |
| Date defended/completed | 2006-08-08 |
| Restricted until | Unrestricted |
| Date published | 2006-09-27 |
| Advisor (committee chair) | Dapkus, P. Daniel |
| Advisor (committee member) |
O'Brien, John Goo, Edward |
| Abstract | This dissertation presents research projects with the common theme: novel GaAs based device structures grown by metal organic chemical vapor deposition (MOCVD).; Vertical-cavity surface-emitting laser (VCSEL) arrays for application to free space optical interconnections were manufactured. The design of VCSELs with oxide apertures is discussed. Low-threshold, uniform 20x20 arrays with a 3dB frequency of up to 5 GHz were demonstrated with MOCVD grown epi structures.; Novel designs for high efficiency, high-power edge emitting lasers are discussed. Excess voltage drop is identified as an important cause limiting the efficiency. First, an asymmetric quantum well with a small conduction band offset in the n side and small valence band offset in the p side is proposed. Second, a transverse junction structure which has the carriers injected from the sides of the QW is also proposed. Simulations of both structures predict 80% overall efficiency. Preliminary selective area growth tests for the transverse junction structure were preformed.; Compliant substrates are evaluated to extend the use of GaAs based materials to longer wavelengths. Thick InGaAs layers with InGaAs multiple quantum wells were grown on compliant substrates which were made by wafer bonding a thin GaAs layer on a thick GaAs substrate. A material quality improvement was observed compared with the same epi structure grown directly on GaAs substrates, but the improvement is too small for real device applications, so the limitations of compliant substrates are discussed.; Preliminary research findings on adaptive designed asymmetric electroabsorption modulators are presented. Control of intentional and background doping in the MOCVD growth of AlGaAs is discussed. The doping behaviors of Zn and Si in AlGaAs under typical growth conditions and at low V/III ratios were investigated. Carbon doping of AlGaAs by CBr4 was realized. The AlGaAs growth rate and lattice constant are influenced by the CBr4 doping. MOCVD grown Al0.3GaAs with low background doping of 1~2E15 cm[superscript -3] was achieved by using TMAl, TEGa and Arsine as sources. |
| Keyword | Gallium arsenide; metal-organic chemical vapor deposition; semiconductor laser; high efficiency; compliant substrate |
| Language | English |
| Part of collection | University of Southern California dissertations and theses |
| Publisher (of the original version) | University of Southern California |
| Place of publication (of the original version) | Los Angeles, California |
| Publisher (of the digital version) | University of Southern California. Libraries |
| Type | texts |
| Legacy record ID | usctheses-m42 |
| Rights | Deng, Yuanming |
| Repository name | Libraries, University of Southern California |
| Repository address | Los Angeles, California |
| Repository email | http://www.usc.edu/isd/libraries/services/ask_a_librarian/email/ |
| Filename | etd-Deng-20060927 |
| Archival file | uscthesesreloadpub_Volume4/etd-Deng-20060927.pdf |
Description
| Title | Page 1 |
| Full text | GALLIUM ARSENIDE BASED SEMICONDUCTOR LASER DESIGN AND GROWTH BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION by Yuanming Deng A Dissertation Presented to the FACULTY OF THE GRADUATE SCHOOL UNIVERSITY OF SOUTHERN CALIFORNIA In Partial Fulfillment of the Requirements for the Degree DOCTOR OF PHILOSOPHY (ELECTRICAL ENGINEERING) December 2006 Copyright 2006 Yuanming Deng |
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