Page 1 |
Save page Remove page | Previous | 1 of 362 | Next |
|
small (250x250 max)
medium (500x500 max)
large ( > 500x500)
Full Resolution
All (PDF)
|
This page
All
|
GROWTH CONTROL AND DESIGN PRINCIPLES OF SELF-ASSEMBLED
QUANTUM DOT MULTIPLE LAYER
STRUCTURES FOR PHOTODETECTOR APPLICATIONS
by
Tetsuya Asano
A Dissertation Presented to the
FACULTY OF THE USC GRADUATE SCHOOL
UNIVERSITY OF SOUTHERN CALIFORNIA
In Partial Fulfillment of the
Requirements for the Degree
DOCTOR OF PHILOSOPHY
(MATERIALS SCIENCE)
December 2010
Copyright 2010 Tetsuya Asano
Object Description
| Title | Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications |
| Author | Asano, Tetsuya |
| Author email | tasano@usc.edu; tetsuyaa26@yahoo.co.jp |
| Degree | Doctor of Philosophy |
| Document type | Dissertation |
| Degree program | Materials Science |
| School | Viterbi School of Engineering |
| Date submitted | 2010 |
| Restricted until | Unrestricted |
| Date published | 2010-10-15 |
| Advisor (committee chair) | Madhukar, Anupam |
| Advisor (committee member) |
Tanguay, Armand R., Jr. Hashemi, Hossein |
| Abstract | Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts.; Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10¹⁰ cmHz^0. 5/W at ~ 77 K will enable RC-QDIP with detectivites > 10¹¹ cmHz^0.5/W that become competitive with other photodetector technologies in the mid IR (3 – 5 μm) and long wavelength IR (8 – 12 μm) ranges with the added advantage of materials stability and normal incidence sensitivity.; Extended defect-free and size-uniform MQD structures of shallow InAs on GaAs (001) SAQDs capped with In0.15Ga0.85As strain relief layers and separated by GaAs spacer layer were grown up to 20 periods employing a judicious combination of MBE and migration enhanced epitaxy (MEE) techniques and examined by detailed transmission electron microscopy studies to reveal the absence of detectable extended defects (dislocation density < ~ 10⁷/cm²). Photoluminescence studies revealed high optical quality.; As our focus was on mid-infrared detectors, the MQD structures were grown in n (GaAs) – i (MQD) – n (GaAs) structures providing electron occupancy in at least the quantum confined ground energy states of the SAQDs and thus photodetection based upon transitions to electron excited states. Bias and temperature-dependent dark and photocurrent measurements were carried out for a variety of doping profiles and the electron density spatial distribution was determined from the resulting band bending profiles. It is revealed that almost no free electrons are present in the middle SAQD layers in the 10-period and 20-period n–i–n QDIP structures, indicating the existence of a high density (~10¹⁵/cm³) of negative charges which can be attributed to electrons trapped in deep levels.; To examine the nature of these deep traps, samples suitable for deep level transient spectroscopy measurement were synthesized and examined. These studies, carried out for the first time for SAQDs, revealed that the deep traps are dominantly present in the GaAs overgrowth layers grown at 500 °C by MBE. For structures involving GaAs overgrowths using MEE at temperatures as low as 350 °C, the deep trap density in the GaAs overgrowth layer was found to be significantly reduced by factor of ~ 20. Thus, employing MEE growth for GaAs spacer layers in n–i(20-period MQD)–n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density.; Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 – 5 μm infrared regime were realized utilizing [(AlAs)₁(GaAs)₄]₄ short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ~ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ~ 10¹⁰ cmHz^0.5/W at ~ 77 K competitive with other IR photodetector technologies. |
| Keyword | self-assembled quantum dots; infrared photodetectors; deep levels; resonant cavity; dark current; photocurrent; activation energy |
| Language | English |
| Part of collection | University of Southern California dissertations and theses |
| Publisher (of the original version) | University of Southern California |
| Place of publication (of the original version) | Los Angeles, California |
| Publisher (of the digital version) | University of Southern California. Libraries |
| Provenance | Electronically uploaded by the author |
| Type | texts |
| Legacy record ID | usctheses-m3505 |
| Contributing entity | University of Southern California |
| Rights | Asano, Tetsuya |
| Repository name | Libraries, University of Southern California |
| Repository address | Los Angeles, California |
| Repository email | http://www.usc.edu/isd/libraries/services/ask_a_librarian/email/ |
| Filename | etd-Asano-4128 |
| Archival file | uscthesesreloadpub_Volume17/etd-Asano-4128.pdf |
Description
| Title | Page 1 |
| Contributing entity | University of Southern California |
| Full text | GROWTH CONTROL AND DESIGN PRINCIPLES OF SELF-ASSEMBLED QUANTUM DOT MULTIPLE LAYER STRUCTURES FOR PHOTODETECTOR APPLICATIONS by Tetsuya Asano A Dissertation Presented to the FACULTY OF THE USC GRADUATE SCHOOL UNIVERSITY OF SOUTHERN CALIFORNIA In Partial Fulfillment of the Requirements for the Degree DOCTOR OF PHILOSOPHY (MATERIALS SCIENCE) December 2010 Copyright 2010 Tetsuya Asano |
